SK Hynix Develops 3D DRAM Utilizing Foundry Processes
SK Hynix announced on the 9th that the development of the next-generation memory 3D DRAM semiconductor can utilize foundry processes. At the 2026 SK Hynix Future Forum held at the Supex Center in Icheon, Vice President Kim Kyung-hoon and Son Ho-young presented the main technical directions for 3D DRAM, including the use of logic foundry processes for DRAM peripheral circuits, maximizing data bus bandwidth, and ultra-short distance transmission. 3D DRAM is the next-generation DRAM that vertically stacks memory cells to improve integration. Achieving this technology requires solving challenges in design, heat generation, fine interconnections, bonding, and process integration in the packaging field. As the boundaries between front-end and back-end packaging, foundry, and memory technology converge, collaborative optimization beyond existing fields will become increasingly important. Son Ho-young stated that 3D technology is changing the technological boundaries between wafer fabrication and packaging, necessitating the establishment of a new collaborative system alongside innovations in advanced packaging technology. Professor Shin Chang-hwan from Korea University remarked that 3D DRAM breaks the boundaries between memory and logic, and as device miniaturization approaches its limits, the shift to 3D technology is inevitable. He proposed a 3D integrated design framework linking materials, devices, packaging, and architecture through artificial intelligence. SK Hynix President Guo Lu stated that the memory market has shifted from a straight path to a changing curve, requiring flexibility to adapt to external environmental changes.
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